Electronic device and method for fabricating the same

ABSTRACT

An electronic device and a method for fabricating the same are provided. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a plurality of first lines extending in a first direction; a plurality of second lines extending in a second direction that intersects with the first direction; a plurality of variable resistance elements disposed between the first lines and the second lines and located at intersections of the first lines and the second lines; and a plug connected to a first portion of each of the first lines, wherein the plug comprises a conductive layer and a material layer having a resistance value higher than that of the conductive layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of and claims priority to Ser.No. 15/087,327 filed Mar. 31, 2016, which claims priority of KoreanPatent Application No. 10-2015-0145911, entitled “ELECTRONIC DEVICE ANDMETHOD FOR FABRICATING THE SAME” and filed on Oct. 20, 2015, which areincorporated herein by reference in their entirety.

TECHNICAL FIELD

This patent document relates to memory circuits or devices and theirapplications in electronic devices or systems.

BACKGROUND

Recently, as electronic appliances trend toward miniaturization, lowpower consumption, high performance, multi-functionality, and so on,semiconductor devices capable of storing information in variouselectronic appliances such as a computer, a portable communicationdevice, and so on have been demanded in the art, and research has beenconducted for the semiconductor devices. Such semiconductor devicesinclude semiconductor devices which can store data using acharacteristic that they are switched between different resistant statesaccording to an applied voltage or current, for example, an RRAM(resistive random access memory), a PRAM (phase change random accessmemory), an FRAM (ferroelectric random access memory), an MRAM (magneticrandom access memory), an E-fuse, etc.

SUMMARY

The disclosed technology in this patent document includes memorycircuits or devices and their applications in electronic devices orsystems and various implementations of an electronic device in which theoperating characteristics and reliability of a semiconductor memory canbe improved.

In an implementation, an electronic device including a semiconductormemory is provided wherein the semiconductor memory includes: aplurality of first lines extending in a first direction; a plurality ofsecond lines extending in a second direction that intersects with thefirst direction; a plurality of variable resistance elements disposedbetween the first lines and the second lines and located atintersections of the first lines and the second lines; and a plugconnected to a first portion of each of the first lines, wherein theplug comprises a conductive layer and a material layer having aresistance value higher than that of the conductive layer.

Implementations of the above electronic device may include one or morethe following.

The material layer comprises a dielectric material or a semiconductormaterial. The material layer exhibits an ohmic-like behavior at anoperating current of the semiconductor memory. The material layer is notbroken down at an operating current of the semiconductor memory. Theplug is used as a current path in a write operation for storing data inthe variable resistance elements. The semiconductor memory furthercomprises a conductive plug connected to a second portion of each of thefirst lines, the second portion being separate from the first portion.The plug is used as a current path in a write operation for storing datain the variable resistance elements, and the conductive plug is used asa current path in a read operation for reading data stored in thevariable resistance elements. The plug and the conductive plug aredisposed in the first direction with the plurality of variableresistance elements disposed therebetween. The plug and the conductiveplug are disposed opposite to each other with respect to the variableresistance elements and the second lines disposed between the plug andthe conductive plug in the first direction, and have substantially thesame thickness in a third direction in which the first lines, thevariable resistance elements and the second lines are stacked. Asidewall of the conductive layer is aligned with a sidewall of thematerial layer. The conductive layer comprises first and secondconductive layers, and the material layer is disposed between the firstconductive layer and the second conductive layer. The material layerfurther extends along a sidewall of the second conductive layer. Thematerial layer is located at one or both ends of the plug. The pluralityof second lines is divided into first and second groups; the electronicdevice includes a first mat region including variable resistanceelements located at intersections of the plurality of first lines andthe second lines of the first group, and a second mat region includingvariable resistance elements located at intersections of the pluralityof first lines and the second lines of the second group; and the plug islocated either in a first region between the first mat region and thesecond mat region or in a second region corresponding to both sides ofthe first and second mat regions. The semiconductor memory furthercomprises a conductive plug connected to a second portion of each of thefirst lines; and the conductive plug is located in one of the first andsecond regions if the plug is located in the other of the first andsecond regions.

The electronic device may further include a microprocessor whichincludes: a control unit configured to receive a signal including acommand from an outside of the microprocessor, and performs extracting,decoding of the command, or controlling input or output of a signal ofthe microprocessor; an operation unit configured to perform an operationbased on a result that the control unit decodes the command; and amemory unit configured to store data for performing the operation, datacorresponding to a result of performing the operation, or an address ofdata for which the operation is performed, wherein the semiconductormemory is part of the memory unit in the microprocessor.

The electronic device may further include a processor which includes: acore unit configured to perform, based on a command inputted from anoutside of the processor, an operation corresponding to the command, byusing data; a cache memory unit configured to store data for performingthe operation, data corresponding to a result of performing theoperation, or an address of data for which the operation is performed;and a bus interface connected between the core unit and the cache memoryunit, and configured to transmit data between the core unit and thecache memory unit, wherein the semiconductor memory is part of the cachememory unit in the processor.

The electronic device may further include a processing system whichincludes: a processor configured to decode a command received by theprocessor and control an operation for information based on a result ofdecoding the command; an auxiliary memory device configured to store aprogram for decoding the command and the information; a main memorydevice configured to call and store the program and the information fromthe auxiliary memory device such that the processor can perform theoperation using the program and the information when executing theprogram; and an interface device configured to perform communicationbetween at least one of the processor, the auxiliary memory device andthe main memory device and the outside, wherein the semiconductor memoryis part of the auxiliary memory device or the main memory device in theprocessing system.

The electronic device may further include a data storage system whichincludes: a storage device configured to store data and conserve storeddata regardless of power supply; a controller configured to controlinput and output of data to and from the storage device according to acommand inputted form an outside; a temporary storage device configuredto temporarily store data exchanged between the storage device and theoutside; and an interface configured to perform communication between atleast one of the storage device, the controller and the temporarystorage device and the outside, wherein the semiconductor memory is partof the storage device or the temporary storage device in the datastorage system.

The electronic device may further include a memory system whichincludes: a memory configured to store data and conserve stored dataregardless of power supply; a memory controller configured to controlinput and output of data to and from the memory according to a commandinputted form an outside; a buffer memory configured to buffer dataexchanged between the memory and the outside; and an interfaceconfigured to perform communication between at least one of the memory,the memory controller and the buffer memory and the outside, wherein thesemiconductor memory is part of the memory or the buffer memory in thememory system.

In an implementation, a method for fabricating an electronic deviceincluding a semiconductor memory includes: forming a plug over asubstrate, the plug comprising a conductive layer and a material layerhaving a resistance value higher than that of the conductive layer;forming a first line over the plug, the first line extending in a firstdirection; forming a variable resistance element over the first line;and forming a second line over the variable resistance element, thesecond line extending in a second direction intersecting with the firstdirection.

Implementations of the above method may include one or more thefollowing.

The material layer comprises a dielectric material or a semiconductormaterial. Forming the plug comprises: forming an interlayer insulatinglayer over the substrate; etching the interlayer insulating layer toform a hole passing through the interlayer insulating layer; forming theconductive layer that fills a lower portion of the hole; and forming thematerial layer that fills at least a part of a remaining portion of thehole in which the conductive layer is formed. The material layer fillsthe part of the remaining portion of the hole, and forming the plugfurther comprises forming an additional conductive layer that entirelyfills the remaining portion of the hole after the material layer isformed. The material layer is formed along sidewalls and a bottomsurface of the remaining portion of the hole in which the conductivelayer is formed, and sidewalls and a bottom surface of the additionalconductive layer are surrounded by the material layer. Forming the plugcomprises: forming an interlayer insulating layer over the substrate;etching the interlayer insulating layer to form a hole passing throughthe interlayer insulating layer; forming the material layer that fills alower portion of the hole; and forming the conductive layer that fills aremaining portion of the hole. The method further comprising forming,over the substrate, a conductive plug connected to the first line.Forming the plug and the conductive plug comprises: forming aninterlayer insulating layer over the substrate; selectively etching theinterlayer insulating layer to form a first hole that provides a regionin which the plug is to be formed, and a second hole that provides aregion in which the conductive plug is to be formed; filling the firstand second holes with a conductive material; forming a mask patternhaving an opening that exposes the first hole; removing a portion of theconductive material in the first hole; and forming the material layerfilling at least a part of a portion of the first hole from which theconductive material is removed. The opening has a width larger than thatof the first hole. The method further comprising forming a plurality offirst holes arranged in the second direction, wherein a plurality ofopenings exposing the plurality of first holes each has a line shapethat extends in the second direction. The plug and the conductive plugare disposed in the first direction with the variable resistanceelements disposed therebetween.

These and other aspects, implementations and associated advantages aredescribed in greater detail in the drawings, the description and theclaims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross-sectional view illustrating a variable resistanceelement of a first comparative example.

FIG. 1B is a graph explaining a method for operating the variableresistance element illustrated in FIG. 1A.

FIG. 2A is a cross-sectional view illustrating a variable resistanceelement of a second comparative example.

FIG. 2B is a graph explaining a method for operating the variableresistance element illustrated in FIG. 2A.

FIG. 3A is a top plan view illustrating a semiconductor device accordingto an implementation of the disclosed technology.

FIG. 3B is a cross-sectional view taken along a line A-A′ of FIG. 3A.

FIG. 4A is a top plan view illustrating a semiconductor device accordingto another implementation of the disclosed technology.

FIG. 4B is a cross-sectional view taken along a line B-B′ of FIG. 4A.

FIGS. 4C to 4D are cross-sectional views showing a method forfabricating the semiconductor device illustrated in FIGS. 4A and 4B.

FIG. 5 is a cross-sectional view showing a plug including a resistanceelement according to an implementation.

FIG. 6 is a cross-sectional view showing a plug including a resistanceelement according to another implementation.

FIG. 7 is a top plan view illustrating a semiconductor device accordingto another implementation of the disclosed technology.

FIG. 8 is an example of configuration diagram of a microprocessorimplementing memory circuitry based on the disclosed technology.

FIG. 9 is an example of configuration diagram of a processorimplementing memory circuitry based on the disclosed technology.

FIG. 10 is an example of configuration diagram of a system implementingmemory circuitry based on the disclosed technology.

FIG. 11 is an example of configuration diagram of a data storage systemimplementing memory circuitry based on the disclosed technology.

FIG. 12 is an example of configuration diagram of a memory systemimplementing memory circuitry based on the disclosed technology.

DETAILED DESCRIPTION

Various examples and implementations of the disclosed technology aredescribed below in detail with reference to the accompanying drawings.

The drawings may not be necessarily to scale and in some instances,proportions of at least some of structures in the drawings may have beenexaggerated in order to clearly illustrate certain features of thedescribed examples or implementations. In presenting a specific examplein a drawing or description having two or more layers in a multi-layerstructure, the relative positioning relationship of such layers or thesequence of arranging the layers as shown reflects a particularimplementation for the described or illustrated example and a differentrelative positioning relationship or sequence of arranging the layersmay be possible. In addition, a described or illustrated example of amulti-layer structure may not reflect all layers present in thatparticular multilayer structure (e.g., one or more additional layers maybe present between two illustrated layers). As a specific example, whena first layer in a described or illustrated multi-layer structure isreferred to as being “on” or “over” a second layer or “on” or “over” asubstrate, the first layer may be directly formed on the second layer orthe substrate but may also represent a structure where one or more otherintermediate layers may exist between the first layer and the secondlayer or the substrate.

Before describing implementations of the disclosed technology, variableresistance elements of comparative examples and methods for operatingthe variable resistance elements will be described.

FIG. 1A is a cross-sectional view illustrating a variable resistanceelement of a first comparative example, and FIG. 1B is a graphexplaining a method for operating the variable resistance elementillustrated in FIG. 1A.

Referring to FIG. 1A, the variable resistance element of the firstcomparative example includes a first electrode 11, a second electrode 14spaced apart from the first electrode 11, a variable resistance layer 12disposed between the first electrode 11 and the second electrode 14, anda selection element layer 13 disposed between the variable resistancelayer 12 and the second electrode 14.

Herein, the first electrode 11 and the second electrode 14 are locatedat both ends, e.g., opposite ends, of the variable resistance element,and may supply a voltage or current to the variable resistance element.The first and second electrodes 11 and 14 may be formed of any ofvarious electrically conductive materials such as metals, metalnitrides, and combinations thereof.

The variable resistance layer 12 may have a variable resistancecharacteristic that switches between different resistance statesaccording to the voltage or current supplied through the first electrode11 and the second electrode 14. The variable resistance layer 12 mayinclude a single-layer structure or multi-layer structure including anyof various materials that are used in RRAM, PRAM, FRAM, MRAM, and thelike. The various materials may include metal oxides such as transitionmetal oxides or perovskite-based materials, phase-change materials suchas chalcogenide-based materials, ferroelectric materials, andferromagnetic materials, and the like. A resistance state of thevariable resistance layer 12 can change according to whether aconductive path is created in or removed from the variable resistancelayer 12. Specifically, if a conductive path passing through thevariable resistance layer 12 is created in the variable resistance layer12, the variable resistance layer 12 may have a low-resistance state. Ifthe conductive path is removed from the variable resistance layer 12,the variable resistance layer 12 may have a high-resistance state. Forexample, if the variable resistance layer 12 is formed of a metal oxidecontaining a large amount of oxygen vacancies, the conductive path maybe created or removed by the movement of the oxygen vacancies. However,implementations are not limited thereto, and the conductive path may beformed in various ways depending on the kind, structure or operatingcharacteristics of the variable resistance layer 12.

The selection element layer 13 may be connected to one end of thevariable resistance layer 12 so as to control access to the variableresistance layer 12. The selection element layer 13 may have thresholdswitching characteristics. Thus, the selection element layer 13 mayblock a current flow to the variable resistance layer 12 when themagnitude of the voltage or current supplied through the first electrode12 and the second electrode 14 is lower than a certain critical value,and may pass a current when the magnitude of the supplied voltage orcurrent exceeds the certain critical value, and thus the passing currentincreases rapidly in proportion to the magnitude of the supplied voltageor current. The selection element layer 13 may include a tunnelingdielectric layer having a relatively wide bandgap. The tunnelingdielectric layer may include a material serving as a diode, an ovonicthreshold switching (OST) material such as a chalcogenide-basedmaterial, a mixed ionic electronic conducting (MIEC) material such as ametal-containing chalcogenide-based material, or a metal insulatortransition material such as NbO₂ or VO₂, SiO₂, Al₂O₃ or the like.

In the first comparative example shown in FIG. 1A, the selection elementlayer 13 is disposed between the variable resistance layer 12 and thesecond electrode 14, but it may also be disposed between the variableresistance layer 12 and the first electrode 11. Alternatively, theselection element layer 13 may be disposed between the variableresistance layer 12 and the first electrode 11, or the selection elementlayer 13 may be omitted.

A current-voltage curve of the variable resistance element shown in FIG.1A is illustrated in FIG. 1B.

Referring to FIG. 1B, the variable resistance element is initially in ahigh-resistance state (HRS). When a voltage that is applied theretoreaches a voltage having a first polarity, for example, a positivevoltage, which has a certain magnitude, a set operation may be performedso that a resistance state of the variable resistance element changesfrom the high-resistance state (HRS) to a low-resistance state (LRS).The applied voltage causing the set operation will hereinafter bereferred to as a “set voltage (Vset).”

The low-resistance state (LRS) of the variable resistance element ismaintained even if the level of the applied voltage is reduced. When theapplied voltage reaches a voltage having a second polarity, for example,a negative voltage, which has a certain magnitude, a reset operation maybe performed so that the resistance state of the variable resistanceelement changes again to the high-resistance state (HRS). The appliedvoltage causing the reset operation will hereinafter be referred to as a“reset voltage (Vreset).”

In this way, the variable resistance element can repeatedly switchbetween the high-resistance state (HRS) and the low-resistance state(LRS). Thus, the variable resistance element can function as anonvolatile memory cell that stores different data according to theresistance state, and maintains the stored data even when the powerapplied thereto is removed. In a read operation in which the data storedin the variable resistance element is read out, a read voltage (Vread)between the set voltage (Vset) and the reset voltage (Vreset) can beapplied to the variable resistance element. Because the resistance stateof the variable resistance element in the read operation has beendetermined by a previous write operation performed before the readoperation, when the read voltage Vread is applied to the variableresistance element, different data may be read out of the variableresistance element depending on the resistance state determined in theprevious write operation.

Meanwhile, a set operation initially performed on the variableresistance element can be referred to as a forming operation. A formingvoltage (Vforming) used in the forming operation may be higher than theset voltage (Vset). This is because an operation for forming an initialconductive path in the variable resistance layer 12 may require a highervoltage than a voltage to form a conductive path in a subsequent setoperation. Each of the set voltage (Vset) and the reset voltage(Vreset), which are used in the set operation and the reset operation,respectively, performed after the forming operation, can be maintainedat a substantially constant level.

However, the variable resistance element of the first comparativeexample described above has a problem in that a high overshootingcurrent occurs in operations, such as the forming operation and/or theset operation, in which the resistance state of the variable resistanceelement changes from the high-resistance state (HRS) to thelow-resistance state (LRS) (see {circle around (1)} in FIG. 1B). Themagnitude of the overshooting current may be much greater than acompliance current (CC). This overshooting current can increase the sizeof a conductive path created in the variable resistance layer 12,resulting in an increase in an off current of the variable resistanceelement. When the off current of the variable resistance elementincreases, current leakage through the variable resistance element mayincrease, and a data read margin may decrease due to a decrease in thedifference between an on current and the off current.

FIG. 2A is a cross-sectional view illustrating a variable resistanceelement of a second comparative example, and FIG. 2B is a graphillustrating a method for operating the variable resistance elementillustrated in FIG. 2A. The second comparative example is provided toillustrate potential solutions to problems of the first comparativeexample. In the following description of FIGS. 2A and 2B, a detaileddescription of parts substantially identical to those of the firstcomparative example will be omitted.

Referring to FIG. 2A, the variable resistance element of the secondcomparative example includes a first electrode 21, a second electrode 24spaced apart from the first electrode 21, a variable resistance layer 22disposed between the first electrode 21 and the second electrode 24, anda selection element layer 23 sandwiched between the variable resistancelayer 22 and the second electrode 24.

Herein, the first electrode 21 may include a first sub-electrode 21A, asecond sub-electrode 21C spaced apart from the first sub-electrode 21A,and a material layer 21B sandwiched between the first sub-electrode 21Aand the second sub-electrode 21C. The first sub-electrode 21A, thematerial layer 21B, and the second sub-electrode 21C may be sequentiallyarranged in the same direction as a direction in which the firstelectrode 21, the variable resistance layer 22, the selection elementlayer 23, and the second electrode 24 are sequentially arranged.

The first sub-electrode 21A and the second sub-electrode 21C may beformed of any of various electrically conductive materials includingmetals, metal nitrides, and combinations thereof.

The material layer 21B may function as a kind of resistance componentduring an operation of the variable resistance element, and may includea material having a resistance value greater than those of the firstsub-electrode 21A and the second sub-electrode 21C. For example, thematerial layer 21B may include any of various dielectric materialsincluding oxides such as metal oxides or silicon oxides, nitrides suchas silicon nitrides, and combinations thereof.

Alternatively, the material layer 21B may include a semiconductormaterial having a relatively low bandgap. Herein, the material layer 21Bmay be thin enough that it demonstrates an ohmic-like behavior in whichan operating current of the variable resistance element increases as avoltage applied thereto increases. This is because the resistance valueof the material layer 21B decreases regardless of the kind of materialas the material layer 21B becomes thinner and thus the material layer21B has leaky characteristics. If the thickness of the material layer21B is greater than a certain critical value, the material layer 21Bwill be broken down at the operating current, and thus will haveconductive characteristics. In other words, the material layer 21B canno longer function as a resistance component. Herein, the material layer21B may be sufficiently thin that imposes a burden on etching. Also, thethickness of the material layer 21B may be smaller than the thickness ofthe first sub-electrode 21A and/or the thickness of the secondsub-electrode 21C.

In the second comparative example, the first electrode 21 has a stackstructure of the first sub-electrode 21A, the material layer 21B and thesecond sub-electrode 21C. However, in another example, instead of thefirst electrode 21, the second electrode 24 may have a stack structureof sub-electrodes and a dielectric layer or a stack structure of asemiconductor layer and sub-electrodes. Alternatively, both the firstand second electrodes 21 and 24 may have a stack structure ofsub-electrodes and a dielectric layer or a stack structure of asemiconductor layer and sub-electrodes.

A current-voltage curve of the variable resistance element shown in FIG.2A is illustrated in FIG. 2B.

Referring to FIG. 2B, the current-voltage curve of the secondcomparative example looks similar to the current-voltage curve of FIG.1B that is indicated by dotted lines in FIG. 2B. However, the curve ofthe second comparative example is somewhat shifted downwards in avoltage region between 0 V and the set voltage (Vset) and/or in avoltage region between 0 V and the forming voltage (Vforming), as shownin FIG. 2B. This indicates that a current flowing in a high-resistancestate (HRS) of the variable resistance element of the second comparativeexample, that is, an off-current, decreases compared to that of thefirst comparative example.

The off-current in the variable resistance element of the secondcomparative example decreases as described above because an overshootingcurrent in operations such as a forming operation or a set operation, inwhich a resistance state changes to a low-resistance state (LRS),greatly decreases. That is, the overshooting current is limited to alevel similar to that of a compliance current (CC). The overshootingcurrent is reduced because parasitic capacitance at both ends of thevariable resistance element is decreased by a thin dielectric layer orsemiconductor layer that is a kind of resistance component, which isinserted in the first electrode 21. The decrease in the overshootingcurrent can reduce the size of a conductive path formed in the variableresistance layer 22, resulting in a decrease in the off current of thevariable resistance element. As a result, a current leakage through thevariable resistance element can be decreased and thus a data read marginof the variable resistance element can be increased, thereby improvingoperating characteristics of the variable resistance element. Becausethe decrease in the overshooting current also reduces physical defectsin the variable resistance layer 22, the reliability of the variableresistance element, such as the endurance and retention characteristics,can also be improved.

However, in the variable resistance element of the second comparativeexample, a process for patterning the variable resistance element mayincrease the complexity of the manufacturing process compared to thefirst comparative example, because the material layer 21B is included inthe variable resistance element.

Additionally, in a write operation for storing data in the variableresistance element, the material layer 21B is preferably used in orderto improve the characteristics of the variable resistance element, butis preferably not used in a read operation for reading data stored inthe variable resistance element. This is because the material layer 21Bcan interfere with a current flow, particularly, the current flow in thevariable resistance element in the low-resistance state (LRS). As aresult, a data read margin of the variable resistance element may bereduced. However, in the case of the second comparative example, thematerial layer 21B cannot be selectively used according to whether thewrite operation or the read operation is performed, because the materiallayer 21B is included in the variable resistance element.

Implementations of the disclosed technology are directed to asemiconductor device and a method for fabricating the same in whichcharacteristics of a variable resistance element can be improved and aprocess of patterning the variable resistance element can be easilyperformed. Furthermore, implementations of the disclosed technology aredirected to a semiconductor device and a method for fabricating the samein which a resistance component can be selectively used according towhether a write operation or a read operation is performed.

FIG. 3A is a top plan view illustrating a semiconductor device accordingto an implementation of the disclosed technology, and FIG. 3B is across-sectional view taken along a line A-A′ of FIG. 3A.

Referring to FIGS. 3A and 3B, the semiconductor device according to thisimplementation may include a substrate 300, a plurality of first lines330 formed over the substrate 300 and extending in a first direction, aplurality of second lines 370 formed above the first lines 330 andextending in a second direction intersecting with the first direction, aplurality of stack structures, each of which includes a variableresistance layer 340 and a selection element layer 350, which aresandwiched between the first lines 330 and the second lines 370 andformed at intersections of the first lines 330 and the second lines 370,and a plurality of plugs 320 sandwiched between the substrate 300 andthe first lines 330 so as to connect the first lines 330 to thesubstrate 300.

Herein, the first lines 330 and the second lines 370 apply a voltage orcurrent to the plurality of stack structures each including the variableresistance layer 340 and the selection element layer 350. The firstlines 330 and the second lines 370 may be formed of any of variouselectrically conductive materials including metals, metal nitrides, andcombinations thereof.

A stack structure of the variable resistance layer 340 and the selectionelement layer 350, which is sandwiched between a single first line 330and a single second line 370, may form a unit memory cell (MC). In otherwords, a memory cell (MC) may be provided at each of intersections ofthe first lines 330 and the second lines 370.

The variable resistance layer 340 in the memory cell (MC) may be formedof substantially the same material as that of the variable resistancelayer 12 shown in FIG. 1. In addition, the selection element layer 350in the memory cell (MC) may be formed of substantially the same materialas that of the selection element layer 13 shown in FIG. 1.

In this implementation, the selection element layer 350 is sandwichedbetween the variable resistance layer 340 and a corresponding one of thesecond lines 370. However, implementations are not limited thereto. Inanother implementation, the selection element layer 350 may also besandwiched between the variable resistance layer 340 and a correspondingone of the first lines 330. In still other implementations, theselection element layer 350 is sandwiched between the variableresistance layer 340 and a corresponding one of the first lines 330, orthe selection element layer 350 is omitted.

In this implementation, the first lines 330 and the second lines 370 mayserve as electrodes. However, in another implementation, electrode(s)may further be provided between each of the first lines 330 and thevariable resistance layer 340 and/or between the selection element layer350 and each of the second lines 370.

The plurality of plugs 320 may be connected to bottom surfaces of thefirst lines 330, respectively, so as to supply a voltage or current tothe first lines 330. The plugs 320 may be located outside regions inwhich memory cells (MC) are arranged in the first and second directions.In the implementation shown in FIGS. 3A and 3B, the plugs 320 mayoverlap with one end of each of the first lines 330 in the firstdirection, respectively. Each of the plugs 320 may include a firstconductive layer 322, a second conductive layer 326 located above thefirst conductive layer 322, and a material layer 324 sandwiched betweenthe first conductive layer 322 and the second conductive layer 326. Thematerial layer 324 has a resistance value greater than those of thefirst and second conductive layers 322 and 326.

Each of the first and second conductive layers 322 and 326 may be formedof any of various electrically conductive materials including metals,metal nitrides, and combinations thereof.

The material layer 324 may be formed of substantially the same materialas that of the material layer 21B shown in FIG. 2A, and may function asa kind of resistance component during an operation of the semiconductordevice. The material layer 324 may include any of various dielectricmaterials including oxides such as metal oxides or silicon oxides,nitrides such as silicon nitrides, and combinations thereof. In anotherimplementation, the material layer 324 may include a semiconductormaterial having a relatively low bandgap. The material layer 324 may besufficiently thin that it demonstrates an ohmic-like behavior and cannotbe broken down during the operation of the semiconductor device. In animplementation, the material layer 324 may be thinner than each of thefirst and second conductive layers 322 and 326. Because the materiallayer 324 is patterned together with the first and second conductivelayers 322 and 326, it may have a sidewall that is aligned with asidewall of at least one of the first and second conductive layers 322and 326.

In the semiconductor device illustrated in FIGS. 3A and 3B, in a writeoperation for storing data in a selected memory cell (MC) and/or a readoperation for reading data stored in the selected memory cell (MC), acurrent flow (see, e.g., the arrow in FIG. 3B) can be formed to passthrough the second line 370 connected with the selected memory cell(MC), the selected memory cell (MC), the first line 330 connected withthe selected memory cell (MC), and the plug 320 connected to the firstline 330. The plug 320 may be connected to a driving circuit (not shown)for the write operation and/or the read operation. The driving circuitmay be provided in the substrate 300 below the plug 320.

Because the current flow passing through the plug 320 including thematerial layer 324, which is a resistance component, is formed duringthe write operation and/or read operation of the selected memory cell(MC), substantially the same effects as those of the second comparativeexample described above may be obtained. In other words, an off currentof the memory cell (MC) can be reduced, and thus current leakage can bereduced and a data read margin can be improved. Furthermore, thereliability of an operation of the memory cell (MC) can be ensured.

A method for fabricating the above-described semiconductor deviceillustrated in FIGS. 3A and 3B will be briefly described hereinafter.

First, a first interlayer insulating layer 310 may be formed on thesubstrate 300, and then the first interlayer insulating layer 310 may beselectively etched to form holes that provide regions in which the plugs320 are to be formed.

Following this, an electrically conductive material may be deposited ona resulting structure including the holes formed in the first interlayerinsulating layer 310. Then the electrically conductive material may beetched back until it has a desired thickness, thereby forming the firstconductive layer 322 filling a lower portion of each of the holes. Next,a dielectric material or a semiconductor material may be deposited on aresulting structure including the first conductive layer 322. Thedeposited dielectric material or the semiconductor material may beetched back until a desired thickness is obtained, thereby forming thematerial layer 324 filling a middle portion of each of the holes.

Thereafter, on a resulting structure including the material layer 324,an electrically conductive material may be deposited to fully fill theremaining portion of each of the holes. After that, a planarizationprocess, for example, a chemical mechanical polishing (CMP) process, maybe performed on the deposited electrically conductive material until atop surface of the first interlayer insulating layer 310 is exposed,thereby forming the second conductive layer 326 filling an upper portionof each of the holes.

In this way, the pillar-shaped plug 320 is formed. The pillar-shapedplug 320 includes a stack structure of the first conductive layer 322,the material layer 324, and the second conductive layer 326. and theplug 320 is connected to a portion of the substrate 300 and passesthrough the first interlayer insulating layer 310. In an implementation,the process for forming the first conductive layer 322 or the processfor forming the second conductive layer 326 may be omitted.

Next, an electrically conductive material may be deposited on the firstinterlayer insulating layer 310 and the plugs 320. The depositedelectrically conductive material may be selectively etched, therebyforming the first lines 330 that contact top surfaces of the plugs 320and extend in a first direction. After that, spaces between the firstlines 330 may be filled with a dielectric material (not shown).

Next, a variable resistance material and a selection element materialmay be sequentially deposited on the first lines 330 and the dielectricmaterial. The deposited variable resistance material and the selectionelement material may be selectively etched, thereby forming the stackstructures of the variable resistance layer 340 and the selectionelement layer 350. Bottom surfaces of the stack structures of thevariable resistance layer 340 and the selection element layer 350 may beconnected to the first lines 330.

Next, spaces between the stack structures of the variable resistancelayer 340 and the selection element layer 350 may be filled with adielectric material to form a second interlayer insulating layer 360.

Then, an electrically conducive material may be deposited on the stackstructures of the variable resistance layer 340 and the selectionelement layer 350 and on the second interlayer insulating layer 360. Thedeposited electrically conductive material may be selectively etched,thereby forming the second lines 370 that contact top surfaces of thestack structures of the variable resistance layer 340 and the selectionelement layer 350 and extend in a second direction crossing the firstdirection.

In the fabrication method described above with reference to FIGS. 3A and3B, unlike in the second comparative example, the material layer 324that is a resistance component is patterned in a process that isseparate from a process for forming a memory cell (MC). Thus, theprocess for forming the memory cell (MC) can be simplified.

Meanwhile, in this implementation, the plugs 320 can be used as currentflow paths not only in a write operation, but also in a read operation.However, as described above, a resistance component is preferably notused in the read operation to prevent an on-current of a memory cell(MC) from decreasing in the read operation, thereby increasing a dataread margin. This will be described in detail with reference to FIGS. 4Aand 4B.

FIG. 4A is a top plan view illustrating a semiconductor device accordingto another implementation of the disclosed technology. FIG. 4B is across-sectional view taken along a line B-B′ of FIG. 4A. FIGS. 4C and 4Dare cross-sectional views showing a method for fabricating thesemiconductor device illustrated in FIGS. 4A and 4B. The followingdescription will focus on differences between the implementation shownin FIGS. 4A and 4B and the implementation shown in FIGS. 3A and 3B.

Referring to FIGS. 4A and 4B, the semiconductor device may include asubstrate 400, a plurality of first lines 430 formed over the substrate400 and extending in a first direction, a plurality of second lines 470formed above the first lines 430 and extending in a second directionintersecting with the first direction, stack structures, each of whichincludes a variable resistance layer 440 and a selection element layer450, which are sandwiched between the first lines 430 and the secondlines 470 and formed at intersections of the first lines 430 and thesecond lines 470, first plugs 420 sandwiched between the substrate 400and the first lines 430 and connecting first portions of the substrate400 to the first lines 430, respectively, and second plugs 425sandwiched between the substrate 400 and the first lines 430 andconnecting second portions of the substrate 400 to the first lines 430,respectively.

Similar to the plugs 320 shown in FIGS. 3A and 3B, the first plugs 420may include a first conductive layer 422, a second conductive layer 426located above the first conductive layer 422, and a material layer 424sandwiched between the first conductive layer 422 and the secondconductive layer 426. The material layer 424 has a resistance valuehigher than that of each of the first and second conductive layers 422and 426. Meanwhile, the second plugs 425 may include an electricallyconductive material only without a resistance component.

The first and second plugs 420 and 425 may be located outside regions inwhich memory cells (MC) are arranged in the first and second directions.In an implementation, the first and second plugs 420 and 425 may belocated opposite to each other in the first direction. In other words, afirst plug 420 may be connected to one end of a first line 430, and asecond plug 425 may be connected to the other end of the first line 430.

In this semiconductor device, in a write operation for storing data in aselected memory cell (MC), a current flow (see, e.g., the solid arrow inFIG. 4B) can be formed to pass through a selected second line 470connected to the selected memory cell (MC), the selected memory cell(MC), a selected first line 430 connected to the selected memory cell(MC), and a selected first plug 420 connected to the selected first line430. For this purpose, the first plug 420 may be connected to a drivingcircuit (not shown) that is provided in the substrate 400 below thefirst plug 420 and performs the write operation.

On the other hand, in a read operation for reading data stored in theselected memory cell (MC), a current flow (see, e.g., the dotted arrowin FIG. 4B) can be formed to pass through the selected second line 470,the selected memory cell (MC), the selected first line 430, and aselected second plug 425 connected to the selected first line 430. Forthis purpose, the second plug 425 may be connected to a driving circuit(not shown) that is provided in the substrate 400 below the second plug425 and performs the read operation.

According to this implementation, the current flow in the writeoperation can be separated from the current flow in the read operation.In other words, in the write operation, a current flow passing throughthe material layer 424 that is a resistance component can be produced,whereas in the read operation, a current flow passing through only anelectrically conductive material that is included in the second plug 425can be produced. Thus, a data read margin of the semiconductor deviceshown in FIGS. 4A and 4B can be improved compared to that of thesemiconductor device shown in FIGS. 3A and 3B.

A method for fabricating the semiconductor device described above willbe described with reference to FIGS. 4C and 4D.

Referring to FIG. 4C, a first interlayer insulating layer 410 is formedon the substrate 400. The first interlayer insulating layer 410 may beselectively etched to form first holes H1 that provide regions in whichthe first plugs 420 are to be formed, and second holes H2 that provideregions in which the second plugs 425 are to be formed.

Then, on a resulting structure including the first and second holes H1and H2, an electrically conductive material may be deposited tosufficiently fill the first and second holes H1 and H2. After that, aplanarization process may be performed on the deposited electricallyconductive material until a top surface of the first interlayerinsulating layer 410 is exposed. Thus, an initial conductive layer 422′is formed in the first holes H1, and the second plugs 425 are formed inthe second holes H2.

Next, as shown in FIG. 4D, a mask pattern M having openings O may beformed. The openings O expose regions corresponding to the first holesH1. After that, a portion of the initial first conductive layer 422′exposed by each of the openings O may be etched back to form the firstconductive layer 422 filling a lower portion of each of the first holesH1. Herein, a horizontal width of the openings O may be greater than ahorizontal width of the first holes H1 in order to ensure an overlapmargin. Subsequent processes are substantially the same as describedabove with reference to FIGS. 3A and 3B, and thus the detaileddescription thereof will be omitted.

In an implementation, the mask pattern M may be removed before a processfor forming the first lines 430. The mask pattern M may be naturallyremoved in a process for forming the material layer 424 and/or theprocess for forming the second conductive layer 426, or may be removedby a separate removal process such as a photoresist strip process.

Meanwhile, as long as the plugs 320 and the first plugs 420 in theabove-described implementations include an electrically conductivematerial and a resistance component having a resistance value higherthan that of the electrically conductive material, configurations of theelectrically conductive material and the resistance component may bemodified in various ways. Examples of this will be described withreference to FIGS. 5 and 6.

FIG. 5 is a cross-sectional view showing a plug including a resistancecomponent according to an implementation.

Referring to FIG. 5, a plug 520 sandwiched between a substrate 500 and afirst line 530 may include a conductive layer 522 and a material layer524. The material layer 524 is located on the conductive layer 522 andhas a resistance value higher than that of the conductive layer 522.

In this implementation, the material layer 524 is located at an upperend of the plug 520. In another implementation, the material layer 524may be located at a lower end or at both ends of the plug 520. In otherwords, the material layer 524 may be located at an interface between thefirst line 530 and the conductive layer 522. Alternatively, although notshown in the figures, the material layer 524 may be located at aninterface between the substrate 500 and the conductive layer 522.

FIG. 6 is a cross-sectional view showing a plug including a resistancecomponent according to another implementation.

Referring to FIG. 6, a plug 620 sandwiched between a substrate 600 and afirst line 630 may include a first conductive layer 622, a materiallayer 624 that is a resistance component, and a second conductive layer626.

Herein, the first conductive layer 622 may have a pillar shape. Thesecond conductive layer 626 may have a pillar shape having a horizontalwidth smaller than that of the first conductive layer 622. The materiallayer 624 may be formed on the first conductive layer 622 and surroundsidewalls and a bottom surface of the second conductive layer 626. Thus,in an implementation, the material layer 624 may have an outer sidewallaligned with a sidewall of the first conductive layer 622 while itseparates the first conductive layer 622 from the second conductivelayer 626.

A process for forming the plug 620 described above will be brieflydescribed.

First, a first interlayer insulating layer 610 formed on the substrate600 may be selectively etched to form a hole, and then the firstconductive layer 622 may be formed to fill a lower portion of the hole.

Next, on a resulting structure including the first conductive layer 622,a dielectric material or a semiconductor material may be deposited alongsidewalls and a bottom surface of an upper portion of the hole. Afterthat, an electrically conductive material may be deposited on thedielectric material or the semiconductor material to fill the remainingpart of the upper portion of the hole.

Thereafter, a planarization process may be performed on the depositedelectrically conductive material until a top surface of the firstinterlayer insulating layer 610 is exposed. As a result, the materiallayer 624 is formed along the sidewalls and bottom surface of the upperportion of the hole, which includes the first conductive layer 622 inits lower portion, and the second conductive layer 626 is formed to fillthe remaining part of the upper portion of the hole and has thesidewalls and bottom surface surrounded by the material layer 624.

FIG. 7 is a top plan view illustrating a semiconductor device accordingto another implementation of the disclosed technology. The semiconductordevice includes a plurality of mat regions.

Referring to FIG. 7, the semiconductor device may include a plurality offirst lines 730 formed on a substrate (not shown) and extending in afirst direction, a plurality of second lines 770 formed above the firstlines 730 and extending in a second direction intersecting with thefirst direction, memory cells disposed between the first lines 730 andthe second lines 770 and formed at intersections of the first lines 730and the second lines 770, and first and second plugs 720 and 725disposed between the substrate and the first lines 730 and connectingthe first lines 730 to the substrate.

Herein, the plurality of first lines 730 can be divided into two or moregroups in the second direction, and the plurality of second lines 770can be divided into two or more groups in the first direction. A regionin which memory cells are located at respective intersections of a firstgroup of first lines 730, which belong to a single group, and a secondgroup of second lines 770, which are included in another single group,can be referred to as a “mat region.” In the implementation shown inFIG. 7, the semiconductor device includes six first lines 730 dividedinto two groups, each including three first lines, and six second lines770 divided into two groups, each including three second lines. Thus,the semiconductor device includes four mat regions, that is, first tofourth mat regions (MAT1, MAT2, MAT3, and MAT4). Each of the first tofourth mat regions (MAT1, MAT2, MAT3, and MAT4) may include 3×3 memorycells disposed at intersections of three first lines 730 and threesecond lines 770.

The first plugs 720, each including a resistance component, may belocated between two adjacent mat regions arranged in the firstdirection. For example, the first plugs 720 may be disposed between thefirst mat region (MAT1) and the second mat region (MAT2) and between thethird mat region (MAT3) and the fourth mat region (MAT4). The secondplugs 725, which do not include a resistance component, may be locatedon both sides of the two adjacent mat regions arranged in the firstdirection. For example, the second plugs 725 may be disposed to the leftof the first mat region (MAT1) and the right of the second mat region(MAT2), and to the left of the third mat region (MAT3) and the right ofthe fourth mat region (MAT4).

In this case, in a write operation of the first mat region (MAT1) or thesecond mat region (MAT2), the first plugs 720 disposed between the firstmat region (MAT1) and the second mat region (MAT2) may be used ascurrent paths. On the other hand, in a read operation of the first matregion (MAT1), the second plugs 725 disposed to the left of the firstmat region (MAT1) may be used as current paths, and in a read operationof the second mat region (MAT2), the second plugs 725 disposed to theright of the second mat region (MAT2) may be used as current paths.Write and read operations for the third and fourth mat regions (MAT3 andMAT4) may be performed in a similar manner to the write and readoperations for the first and second mat regions (MAT1 and MAT2).

In another implementation, the position of the first plugs 720 and theposition of the second plugs 725 may be reversed. In other words, thesecond plugs 725 may be located between two adjacent mat regions, andthe first plugs 720 may be located at both sides of the two adjacent matregions.

In a process of fabricating the semiconductor device shown in FIG. 7, amask pattern having an opening O that exposes a region in which thefirst plug 720 is formed is used (see FIG. 4D). The opening O may have aline shape that has a width larger than that of the first plug 720 inthe first direction and that extends in the second direction.

According to the implementations of the disclosed technology describedabove, there may be provided an electronic device including asemiconductor device having improved operating characteristics andreliability, and a method for fabricating the same.

The above and other memory circuits or semiconductor devices based onthe disclosed technology can be used in a range of devices or systems.FIGS. 8-12 provide some examples of devices or systems that canimplement the memory circuits disclosed herein.

FIG. 8 is an example of configuration diagram of a microprocessorimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 8, a microprocessor 1000 may perform tasks forcontrolling and tuning a series of processes of receiving data fromvarious external devices, processing the data, and outputting processingresults to external devices. The microprocessor 1000 may include amemory unit 1010, an operation unit 1020, a control unit 1030, and soon. The microprocessor 1000 may be various data processing units such asa central processing unit (CPU), a graphic processing unit (GPU), adigital signal processor (DSP) and an application processor (AP).

The memory unit 1010 is a part which stores data in the microprocessor1000, as a processor register, register or the like. The memory unit1010 may include a data register, an address register, a floating pointregister and so on. Besides, the memory unit 1010 may include variousregisters. The memory unit 1010 may perform the function of temporarilystoring data for which operations are to be performed by the operationunit 1020, result data of performing the operations and addresses wheredata for performing of the operations are stored.

The memory unit 1010 may include one or more of the above-describedsemiconductor devices in accordance with the implementations. Forexample, the memory unit 1010 may include a plurality of first linesextending in a first direction; a plurality of second lines extending ina second direction that intersects with the first direction; a pluralityof variable resistance elements disposed between the first lines and thesecond lines and located at intersections of the first lines and thesecond lines; and a plug connected to a first portion of each of thefirst lines, wherein the plug comprises a conductive layer and amaterial layer having a resistance value higher than that of theconductive layer. Through this, operating characteristics andreliability of the memory unit 1010 may be improved. As a consequence,operating characteristics and reliability of the microprocessor 1000 maybe improved.

The operation unit 1020 may perform four arithmetical operations orlogical operations according to results that the control unit 1030decodes commands. The operation unit 1020 may include at least onearithmetic logic unit (ALU) and so on.

The control unit 1030 may receive signals from the memory unit 1010, theoperation unit 1020 and an external device of the microprocessor 1000,perform extraction, decoding of commands, and controlling input andoutput of signals of the microprocessor 1000, and execute processingrepresented by programs.

The microprocessor 1000 according to the present implementation mayadditionally include a cache memory unit 1040 which can temporarilystore data to be inputted from an external device other than the memoryunit 1010 or to be outputted to an external device. In this case, thecache memory unit 1040 may exchange data with the memory unit 1010, theoperation unit 1020 and the control unit 1030 through a bus interface1050.

FIG. 9 is an example of configuration diagram of a processorimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 9, a processor 1100 may improve performance andrealize multi-functionality by including various functions other thanthose of a microprocessor which performs tasks for controlling andtuning a series of processes of receiving data from various externaldevices, processing the data, and outputting processing results toexternal devices. The processor 1100 may include a core unit 1110 whichserves as the microprocessor, a cache memory unit 1120 which serves tostoring data temporarily, and a bus interface 1130 for transferring databetween internal and external devices. The processor 1100 may includevarious system-on-chips (SoCs) such as a multi-core processor, a graphicprocessing unit (GPU) and an application processor (AP).

The core unit 1110 of the present implementation is a part whichperforms arithmetic logic operations for data inputted from an externaldevice, and may include a memory unit 1111, an operation unit 1112 and acontrol unit 1113.

The memory unit 1111 is a part which stores data in the processor 1100,as a processor register, a register or the like. The memory unit 1111may include a data register, an address register, a floating pointregister and so on. Besides, the memory unit 1111 may include variousregisters. The memory unit 1111 may perform the function of temporarilystoring data for which operations are to be performed by the operationunit 1112, result data of performing the operations and addresses wheredata for performing of the operations are stored. The operation unit1112 is a part which performs operations in the processor 1100. Theoperation unit 1112 may perform four arithmetical operations, logicaloperations, according to results that the control unit 1113 decodescommands, or the like. The operation unit 1112 may include at least onearithmetic logic unit (ALU) and so on. The control unit 1113 may receivesignals from the memory unit 1111, the operation unit 1112 and anexternal device of the processor 1100, perform extraction, decoding ofcommands, controlling input and output of signals of processor 1100, andexecute processing represented by programs.

The cache memory unit 1120 is a part which temporarily stores data tocompensate for a difference in data processing speed between the coreunit 1110 operating at a high speed and an external device operating ata low speed. The cache memory unit 1120 may include a primary storagesection 1121, a secondary storage section 1122 and a tertiary storagesection 1123. In general, the cache memory unit 1120 includes theprimary and secondary storage sections 1121 and 1122, and may includethe tertiary storage section 1123 in the case where high storagecapacity is required. As the occasion demands, the cache memory unit1120 may include an increased number of storage sections. That is tosay, the number of storage sections which are included in the cachememory unit 1120 may be changed according to a design. The speeds atwhich the primary, secondary and tertiary storage sections 1121, 1122and 1123 store and discriminate data may be the same or different. Inthe case where the speeds of the respective storage sections 1121, 1122and 1123 are different, the speed of the primary storage section 1121may be largest. At least one storage section of the primary storagesection 1121, the secondary storage section 1122 and the tertiarystorage section 1123 of the cache memory unit 1120 may include one ormore of the above-described semiconductor devices in accordance with theimplementations. For example, the cache memory unit 1120 may include aplurality of first lines extending in a first direction; a plurality ofsecond lines extending in a second direction that intersects with thefirst direction; a plurality of variable resistance elements disposedbetween the first lines and the second lines and located atintersections of the first lines and the second lines; and a plugconnected to a first portion of each of the first lines, wherein theplug comprises a conductive layer and a material layer having aresistance value higher than that of the conductive layer. Through this,operating characteristics and reliability of the cache memory unit 1120may be improved. As a consequence, operating characteristics andreliability of the processor 1100 may be improved.

Although it was shown in FIG. 9 that all the primary, secondary andtertiary storage sections 1121, 1122 and 1123 are configured inside thecache memory unit 1120, it is to be noted that all the primary,secondary and tertiary storage sections 1121, 1122 and 1123 of the cachememory unit 1120 may be configured outside the core unit 1110 and maycompensate for a difference in data processing speed between the coreunit 1110 and the external device. Meanwhile, it is to be noted that theprimary storage section 1121 of the cache memory unit 1120 may bedisposed inside the core unit 1110 and the secondary storage section1122 and the tertiary storage section 1123 may be configured outside thecore unit 1110 to strengthen the function of compensating for adifference in data processing speed. In another implementation, theprimary and secondary storage sections 1121, 1122 may be disposed insidethe core units 1110 and tertiary storage sections 1123 may be disposedoutside core units 1110.

The bus interface 1130 is a part which connects the core unit 1110, thecache memory unit 1120 and external device and allows data to beefficiently transmitted.

The processor 1100 according to the present implementation may include aplurality of core units 1110, and the plurality of core units 1110 mayshare the cache memory unit 1120. The plurality of core units 1110 andthe cache memory unit 1120 may be directly connected or be connectedthrough the bus interface 1130. The plurality of core units 1110 may beconfigured in the same way as the above-described configuration of thecore unit 1110. In the case where the processor 1100 includes theplurality of core unit 1110, the primary storage section 1121 of thecache memory unit 1120 may be configured in each core unit 1110 incorrespondence to the number of the plurality of core units 1110, andthe secondary storage section 1122 and the tertiary storage section 1123may be configured outside the plurality of core units 1110 in such a wayas to be shared through the bus interface 1130. The processing speed ofthe primary storage section 1121 may be larger than the processingspeeds of the secondary and tertiary storage section 1122 and 1123. Inanother implementation, the primary storage section 1121 and thesecondary storage section 1122 may be configured in each core unit 1110in correspondence to the number of the plurality of core units 1110, andthe tertiary storage section 1123 may be configured outside theplurality of core units 1110 in such a way as to be shared through thebus interface 1130.

The processor 1100 according to the present implementation may furtherinclude an embedded memory unit 1140 which stores data, a communicationmodule unit 1150 which can transmit and receive data to and from anexternal device in a wired or wireless manner, a memory control unit1160 which drives an external memory device, and a media processing unit1170 which processes the data processed in the processor 1100 or thedata inputted from an external input device and outputs the processeddata to an external interface device and so on. Besides, the processor1100 may include a plurality of various modules and devices. In thiscase, the plurality of modules which are added may exchange data withthe core units 1110 and the cache memory unit 1120 and with one another,through the bus interface 1130.

The embedded memory unit 1140 may include not only a volatile memory butalso a nonvolatile memory. The volatile memory may include a DRAM(dynamic random access memory), a mobile DRAM, an SRAM (static randomaccess memory), and a memory with similar functions to above mentionedmemories, and so on. The nonvolatile memory may include a ROM (read onlymemory), a NOR flash memory, a NAND flash memory, a phase change randomaccess memory (PRAM), a resistive random access memory (RRAM), a spintransfer torque random access memory (STTRAM), a magnetic random accessmemory (MRAM), a memory with similar functions.

The communication module unit 1150 may include a module capable of beingconnected with a wired network, a module capable of being connected witha wireless network and both of them. The wired network module mayinclude a local area network (LAN), a universal serial bus (USB), anEthernet, power line communication (PLC) such as various devices whichsend and receive data through transmit lines, and so on. The wirelessnetwork module may include Infrared Data Association (IrDA), codedivision multiple access (CDMA), time division multiple access (TDMA),frequency division multiple access (FDMA), a wireless LAN, Zigbee, aubiquitous sensor network (USN), Bluetooth, radio frequencyidentification (RFID), long term evolution (LTE), near fieldcommunication (NFC), a wireless broadband Internet (Wibro), high speeddownlink packet access (HSDPA), wideband CDMA (WCDMA), ultra wideband(UWB) such as various devices which send and receive data withouttransmit lines, and so on.

The memory control unit 1160 is to administrate and process datatransmitted between the processor 1100 and an external storage deviceoperating according to a different communication standard. The memorycontrol unit 1160 may include various memory controllers, for example,devices which may control IDE (Integrated Device Electronics), SATA(Serial Advanced Technology Attachment), SCSI (Small Computer SystemInterface), RAID (Redundant Array of Independent Disks), an SSD (solidstate disk), eSATA (External SATA), PCMCIA (Personal Computer MemoryCard International Association), a USB (universal serial bus), a securedigital (SD) card, a mini secure digital (mSD) card, a micro securedigital (micro SD) card, a secure digital high capacity (SDHC) card, amemory stick card, a smart media (SM) card, a multimedia card (MMC), anembedded MMC (eMMC), a compact flash (CF) card, and so on.

The media processing unit 1170 may process the data processed in theprocessor 1100 or the data inputted in the forms of image, voice andothers from the external input device and output the data to theexternal interface device. The media processing unit 1170 may include agraphic processing unit (GPU), a digital signal processor (DSP), a highdefinition audio device (HD audio), a high definition multimediainterface (HDMI) controller, and so on.

FIG. 10 is an example of configuration diagram of a system implementingmemory circuitry based on the disclosed technology.

Referring to FIG. 10, a system 1200 as an apparatus for processing datamay perform input, processing, output, communication, storage, etc. toconduct a series of manipulations for data. The system 1200 may includea processor 1210, a main memory device 1220, an auxiliary memory device1230, an interface device 1240, and so on. The system 1200 of thepresent implementation may be various electronic systems which operateusing processors, such as a computer, a server, a PDA (personal digitalassistant), a portable computer, a web tablet, a wireless phone, amobile phone, a smart phone, a digital music player, a PMP (portablemultimedia player), a camera, a global positioning system (GPS), a videocamera, a voice recorder, a telematics, an audio visual (AV) system, asmart television, and so on.

The processor 1210 may decode inputted commands and processes operation,comparison, etc. for the data stored in the system 1200, and controlsthese operations. The processor 1210 may include a microprocessor unit(MPU), a central processing unit (CPU), a single/multi-core processor, agraphic processing unit (GPU), an application processor (AP), a digitalsignal processor (DSP), and so on.

The main memory device 1220 is a storage which can temporarily store,call and execute program codes or data from the auxiliary memory device1230 when programs are executed and can conserve memorized contents evenwhen power supply is cut off. The main memory device 1220 may includeone or more of the above-described semiconductor devices in accordancewith the implementations. For example, the main memory device 1220 mayinclude a plurality of first lines extending in a first direction; aplurality of second lines extending in a second direction thatintersects with the first direction; a plurality of variable resistanceelements disposed between the first lines and the second lines andlocated at intersections of the first lines and the second lines; and aplug connected to a first portion of each of the first lines, whereinthe plug comprises a conductive layer and a material layer having aresistance value higher than that of the conductive layer. Through this,operating characteristics and reliability of the main memory device 1220may be improved. As a consequence, operating characteristics andreliability of the system 1200 may be improved.

Also, the main memory device 1220 may further include a static randomaccess memory (SRAM), a dynamic random access memory (DRAM), and so on,of a volatile memory type in which all contents are erased when powersupply is cut off. Unlike this, the main memory device 1220 may notinclude the semiconductor devices according to the implementations, butmay include a static random access memory (SRAM), a dynamic randomaccess memory (DRAM), and so on, of a volatile memory type in which allcontents are erased when power supply is cut off.

The auxiliary memory device 1230 is a memory device for storing programcodes or data. While the speed of the auxiliary memory device 1230 isslower than the main memory device 1220, the auxiliary memory device1230 can store a larger amount of data. The auxiliary memory device 1230may include one or more of the above-described semiconductor devices inaccordance with the implementations. For example, the auxiliary memorydevice 1230 may include a plurality of first lines extending in a firstdirection; a plurality of second lines extending in a second directionthat intersects with the first direction; a plurality of variableresistance elements disposed between the first lines and the secondlines and located at intersections of the first lines and the secondlines; and a plug connected to a first portion of each of the firstlines, wherein the plug comprises a conductive layer and a materiallayer having a resistance value higher than that of the conductivelayer. Through this, operating characteristics and reliability of theauxiliary memory device 1230 may be improved. As a consequence,operating characteristics and reliability of the system 1200 may beimproved.

Also, the auxiliary memory device 1230 may further include a datastorage system (see the reference numeral 1300 of FIG. 10) such as amagnetic tape using magnetism, a magnetic disk, a laser disk usingoptics, a magneto-optical disc using both magnetism and optics, a solidstate disk (SSD), a USB memory (universal serial bus memory), a securedigital (SD) card, a mini secure digital (mSD) card, a micro securedigital (micro SD) card, a secure digital high capacity (SDHC) card, amemory stick card, a smart media (SM) card, a multimedia card (MMC), anembedded MMC (eMMC), a compact flash (CF) card, and so on. Unlike this,the auxiliary memory device 1230 may not include the semiconductordevices according to the implementations, but may include data storagesystems (see the reference numeral 1300 of FIG. 10) such as a magnetictape using magnetism, a magnetic disk, a laser disk using optics, amagneto-optical disc using both magnetism and optics, a solid state disk(SSD), a USB memory (universal serial bus memory), a secure digital (SD)card, a mini secure digital (mSD) card, a micro secure digital (microSD) card, a secure digital high capacity (SDHC) card, a memory stickcard, a smart media (SM) card, a multimedia card (MMC), an embedded MMC(eMMC), a compact flash (CF) card, and so on.

The interface device 1240 may be to perform exchange of commands anddata between the system 1200 of the present implementation and anexternal device. The interface device 1240 may be a keypad, a keyboard,a mouse, a speaker, a mike, a display, various human interface devices(HIDs), a communication device, and so on. The communication device mayinclude a module capable of being connected with a wired network, amodule capable of being connected with a wireless network and both ofthem. The wired network module may include a local area network (LAN), auniversal serial bus (USB), an Ethernet, power line communication (PLC),such as various devices which send and receive data through transmitlines, and so on. The wireless network module may include Infrared DataAssociation (IrDA), code division multiple access (CDMA), time divisionmultiple access (TDMA), frequency division multiple access (FDMA), awireless LAN, Zigbee, a ubiquitous sensor network (USN), Bluetooth,radio frequency identification (RFID), long term evolution (LTE), nearfield communication (NFC), a wireless broadband Internet (Wibro), highspeed downlink packet access (HSDPA), wideband CDMA (WCDMA), ultrawideband (UWB), such as various devices which send and receive datawithout transmit lines, and so on.

FIG. 11 is an example of configuration diagram of a data storage systemimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 11, a data storage system 1300 may include a storagedevice 1310 which has a nonvolatile characteristic as a component forstoring data, a controller 1320 which controls the storage device 1310,an interface 1330 for connection with an external device, and atemporary storage device 1340 for storing data temporarily. The datastorage system 1300 may be a disk type such as a hard disk drive (HDD),a compact disc read only memory (CDROM), a digital versatile disc (DVD),a solid state disk (SSD), and so on, and a card type such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on.

The storage device 1310 may include a nonvolatile memory which storesdata semi-permanently. The nonvolatile memory may include a ROM (readonly memory), a NOR flash memory, a NAND flash memory, a phase changerandom access memory (PRAM), a resistive random access memory (RRAM), amagnetic random access memory (MRAM), and so on.

The controller 1320 may control exchange of data between the storagedevice 1310 and the interface 1330. To this end, the controller 1320 mayinclude a processor 1321 for performing an operation for, processingcommands inputted through the interface 1330 from an outside of the datastorage system 1300 and so on.

The interface 1330 is to perform exchange of commands and data betweenthe data storage system 1300 and the external device. In the case wherethe data storage system 1300 is a card type, the interface 1330 may becompatible with interfaces which are used in devices, such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on, or be compatible with interfaceswhich are used in devices similar to the above mentioned devices. In thecase where the data storage system 1300 is a disk type, the interface1330 may be compatible with interfaces, such as IDE (Integrated DeviceElectronics), SATA (Serial Advanced Technology Attachment), SCSI (SmallComputer System Interface), eSATA (External SATA), PCMCIA (PersonalComputer Memory Card International Association), a USB (universal serialbus), and so on, or be compatible with the interfaces which are similarto the above mentioned interfaces. The interface 1330 may be compatiblewith one or more interfaces having a different type from each other.

The temporary storage device 1340 can store data temporarily forefficiently transferring data between the interface 1330 and the storagedevice 1310 according to diversifications and high performance of aninterface with an external device, a controller and a system. Thetemporary storage device 1340 for temporarily storing data may includeone or more of the above-described semiconductor devices in accordancewith the implementations. The temporary storage device 1340 may includea plurality of first lines extending in a first direction; a pluralityof second lines extending in a second direction that intersects with thefirst direction; a plurality of variable resistance elements disposedbetween the first lines and the second lines and located atintersections of the first lines and the second lines; and a plugconnected to a first portion of each of the first lines, wherein theplug comprises a conductive layer and a material layer having aresistance value higher than that of the conductive layer. Through this,operating characteristics and reliability of the storage device 1310 orthe temporary storage device 1340 may be improved. As a consequence,operating characteristics, reliability and data storage characteristicsof the data storage system 1300 may be improved.

FIG. 12 is an example of configuration diagram of a memory systemimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 12, a memory system 1400 may include a memory 1410which has a nonvolatile characteristic as a component for storing data,a memory controller 1420 which controls the memory 1410, an interface1430 for connection with an external device, and so on. The memorysystem 1400 may be a card type such as a solid state disk (SSD), a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on.

The memory 1410 for storing data may include one or more of theabove-described semiconductor devices in accordance with theimplementations. For example, the memory 1410 may include a plurality offirst lines extending in a first direction; a plurality of second linesextending in a second direction that intersects with the firstdirection; a plurality of variable resistance elements disposed betweenthe first lines and the second lines and located at intersections of thefirst lines and the second lines; and a plug connected to a firstportion of each of the first lines, wherein the plug comprises aconductive layer and a material layer having a resistance value higherthan that of the conductive layer. Through this, operatingcharacteristics and reliability of the memory 1410 may be improved. As aconsequence, operating characteristics, reliability and memorycharacteristics of the memory system 1400 may be improved.

Also, the memory 1410 according to the present implementation mayfurther include a ROM (read only memory), a NOR flash memory, a NANDflash memory, a phase change random access memory (PRAM), a resistiverandom access memory (RRAM), a magnetic random access memory (MRAM), andso on, which have a nonvolatile characteristic.

The memory controller 1420 may control exchange of data between thememory 1410 and the interface 1430. To this end, the memory controller1420 may include a processor 1421 for performing an operation for andprocessing commands inputted through the interface 1430 from an outsideof the memory system 1400.

The interface 1430 is to perform exchange of commands and data betweenthe memory system 1400 and the external device. The interface 1430 maybe compatible with interfaces which are used in devices, such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on, or be compatible with interfaceswhich are used in devices similar to the above mentioned devices. Theinterface 1430 may be compatible with one or more interfaces having adifferent type from each other.

The memory system 1400 according to the present implementation mayfurther include a buffer memory 1440 for efficiently transferring databetween the interface 1430 and the memory 1410 according todiversification and high performance of an interface with an externaldevice, a memory controller and a memory system. For example, the buffermemory 1440 for temporarily storing data may include one or more of theabove-described semiconductor devices in accordance with theimplementations. The buffer memory 1440 may include a plurality of firstlines extending in a first direction; a plurality of second linesextending in a second direction that intersects with the firstdirection; a plurality of variable resistance elements disposed betweenthe first lines and the second lines and located at intersections of thefirst lines and the second lines; and a plug connected to a firstportion of each of the first lines, wherein the plug comprises aconductive layer and a material layer having a resistance value higherthan that of the conductive layer. Through this, operatingcharacteristics and reliability of the buffer memory 1440 may beimproved. As a consequence, operating characteristics, reliability andmemory characteristics of the memory system 1400 may be improved.

Moreover, the buffer memory 1440 according to the present implementationmay further include an SRAM (static random access memory), a DRAM(dynamic random access memory), and so on, which have a volatilecharacteristic, and a phase change random access memory (PRAM), aresistive random access memory (RRAM), a spin transfer torque randomaccess memory (STTRAM), a magnetic random access memory (MRAM), and soon, which have a nonvolatile characteristic. Unlike this, the buffermemory 1440 may not include the semiconductor devices according to theimplementations, but may include an SRAM (static random access memory),a DRAM (dynamic random access memory), and so on, which have a volatilecharacteristic, and a phase change random access memory (PRAM), aresistive random access memory (RRAM), a spin transfer torque randomaccess memory (STTRAM), a magnetic random access memory (MRAM), and soon, which have a nonvolatile characteristic.

Features in the above examples of electronic devices or systems in FIGS.8-12 based on the memory devices disclosed in this document may beimplemented in various devices, systems or applications. Some examplesinclude mobile phones or other portable communication devices, tabletcomputers, notebook or laptop computers, game machines, smart TV sets,TV set top boxes, multimedia servers, digital cameras with or withoutwireless communication functions, wrist watches or other wearabledevices with wireless communication capabilities.

While this patent document contains many specifics, these should not beconstrued as limitations on the scope of any invention or of what may beclaimed, but rather as descriptions of features that may be specific toparticular embodiments of particular inventions. Certain features thatare described in this patent document in the context of separateembodiments can also be implemented in combination in a singleembodiment. Conversely, various features that are described in thecontext of a single embodiment can also be implemented in multipleembodiments separately or in any suitable subcombination. Moreover,although features may be described above as acting in certaincombinations and even initially claimed as such, one or more featuresfrom a claimed combination can in some cases be excised from thecombination, and the claimed combination may be directed to asubcombination or variation of a subcombination.

Similarly, while operations are depicted in the drawings in a particularorder, this should not be understood as requiring that such operationsbe performed in the particular order shown or in sequential order, orthat all illustrated operations be performed, to achieve desirableresults. Moreover, the separation of various system components in theembodiments described in this patent document should not be understoodas requiring such separation in all embodiments.

Only a few implementations and examples are described. Otherimplementations, enhancements and variations can be made based on whatis described and illustrated in this patent document.

What is claimed is:
 1. A method for fabricating an electronic deviceincluding a semiconductor memory, the method comprising: forming a plugover a substrate, the plug comprising a conductive layer and a materiallayer having a resistance value higher than that of the conductivelayer; forming a conductive plug over the substrate; forming a firstline over the plug, the first line extending in a first direction;forming a variable resistance element over the first line; and forming asecond line over the variable resistance element, the second lineextending in a second direction intersecting with the first direction,wherein the conductive layer comprises first and second conductivelayers, and the material layer is disposed between the first conductivelayer and the second conductive layer, the first and second conductivelayers and the material layer being stacked in a direction perpendicularto a top surface of the substrate, wherein the conductive plug isconnected to the first line, and wherein the plug has a resistance valuehigher than that of the conductive plug.
 2. The method of claim 1,wherein the material layer comprises a dielectric material or asemiconductor material.
 3. The method of claim 1, wherein forming theplug comprises: forming an interlayer insulating layer over thesubstrate; etching the interlayer insulating layer to form a holepassing through the interlayer insulating layer; forming the firstconductive layer that fills a lower portion of the hole; and forming thematerial layer that fills at least a part of a remaining portion of thehole in which the first conductive layer is formed.
 4. The method ofclaim 3, wherein the material layer fills the part of the remainingportion of the hole, and forming the plug further comprises forming thesecond conductive layer that entirely fills the remaining portion of thehole after the material layer is formed.
 5. The method of claim 4,wherein the material layer is formed along sidewalls and a bottomsurface of the remaining portion of the hole in which the firstconductive layer is formed, and sidewalls and a bottom surface of thesecond conductive layer are surrounded by the material layer.
 6. Themethod of claim 1, wherein forming the plug and the conductive plugcomprises: forming an interlayer insulating layer over the substrate;selectively etching the interlayer insulating layer to form a first holethat provides a region in which the plug is to be formed, and a secondhole that provides a region in which the conductive plug is to beformed; filling the first and second holes with a conductive material;forming a mask pattern having an opening that exposes the first hole;removing a portion of the conductive material in the first hole; andforming the material layer filling at least a part of a portion of thefirst hole from which the conductive material is removed.
 7. The methodof claim 6, wherein the opening has a width larger than that of thefirst hole.
 8. The method of claim 6, further comprising forming aplurality of first holes arranged in the second direction, wherein aplurality of openings exposing the plurality of first holes each has aline shape that extends in the second direction.
 9. The method of claim1, wherein the plug and the conductive plug are disposed in the firstdirection with the variable resistance elements disposed therebetween.10. A method for fabricating an electronic device including asemiconductor memory, the method comprising: forming a plug over asubstrate, the plug comprising a conductive layer and a material layerhaving a resistance value higher than that of the conductive layer;forming a conductive plug over the substrate; forming a first line overthe plug, the first line extending in a first direction; forming avariable resistance element over the first line; and forming a secondline over the variable resistance element, the second line extending ina second direction intersecting with the first direction, wherein theconductive plug is connected to the first line, wherein the plug has aresistance value higher than that of the conductive plug, and whereinforming the plug comprises: forming an interlayer insulating layer overthe substrate; etching the interlayer insulating layer to form a holepassing through the interlayer insulating layer; forming the materiallayer that fills a lower portion of the hole; and forming the conductivelayer that fills a remaining portion of the hole, wherein the conductivelayer and the material layer are stacked in a direction perpendicular toa top surface of the substrate.